Recollections on MOSFET Scaling

Quantum Mechanical Effects on Mosfet Scaling Limit

Temperature scaling concept of MOSFET

Lowering both the threshold voltage (Vth) and subthreshold swing (S) at the same time is essentially required for O.1pm and below O.lym MOSFETs with low supply voltage. In this paper, we discuss a temperature scaling concept of MOSFET and the device characteristics of the fabricated 77K MOSFETs. In the temperature scaling concept, the physical quantities relating to potential are scaled with op...

Effects of Gate-Length Scaling on Microwave MOSFET Performance

This paper focuses on the extraction of an accurate small-signal equivalent circuit for metal-oxide-semiconductor field-effect transistors (MOSFETs). An analytical modeling approach was developed and successfully validated through the comparison between measured and simulated scattering parameters. The extraction of the equivalent circuit elements allowed for the estimation of the intrinsic uni...

Scaling of Dimensions & Gate Capacitances of MOSFET

The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage current is too large. It is necessary to replace the SiO2 with a physically thicker layer of oxides of higher dielectric constant (κ) or ‘high K’ gate oxides such as hafnium oxide and hafnium silicate. Little was know...

Advanced MOSFET Designs and Implications for SRAM Scaling

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